Download Transport Properties of Transition Metal Oxide Thin Films and Interfaces under Light Irradiation PDF

TitleTransport Properties of Transition Metal Oxide Thin Films and Interfaces under Light Irradiation
LanguageEnglish
File Size15.0 MB
Total Pages159
Document Text Contents
Page 79

Transport properties of narrow band manganite thin films
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2 0 1 1 M u h a m m a d R I A Z - P h D T h e s i s


Page 60

However, in spite of the different structural details, PCMO_110 and PCMO_001 show a

similar overall transport behavior.



Figure 3.7: (a) Temperature dependence of resistivity for samples PCMO_110 and PCMO_001
showing insulating behavior with feeble traces of CO, (b) logarithmic derivative plot shows better signs
of CO.

Additionally, in these samples the electric transport is characterized by an activated

mechanism. Here the carriers are polarons, i.e., holes dressed by the interaction with the

lattice, so that the activation mechanism enables the displacement of polarons from one site

to the other. Meanwhile, the I-V characteristics show a slight nonlinearity (see Fig. 3.8).




Figure 3.8: I vs. V curves for PCMO_001 (150 nm) sample at different temperatures.

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